Sputtering Rates

To use these charts, locate the material for which known conditions are available. Then multiply the rate by the relative factors to arrive at the estimated rate for the new material. For example, with previous data showing 3.5A/s aluminum at l00W, then titanium at similar conditions will generate approximately (0.53/1.00) &#; 3.5 Å/s &#; 2 Å/s.

Acetron are exported all over the world and different industries with quality first. Our belief is to provide our customers with more and better high value-added products. Let's create a better future together.

The rates in this table are calculated based on a 500V cathode potential. As the power is increased greater than two times the original rate, the relative rate will drop slightly (up to 10%). For example, aluminum at 250W.

Al250W = 0.9 &#; AI100W &#; (P1/P0)
0.9 &#; 3.5 Å/s &#; (250/100) &#; 7.4 Å/s

The rates in the ceramics table assume the use of an RF power supply and account for the partial duty cycle of the RF generator as compared to a DC supply. A pulsed DC supply will yield slightly higher effective rates.

The magnetic materials table shows the rate for DC operation with a new target. As the magnetic target erodes, the influence of the remaining material on the magnetic confinement field will change, leading to variations in sputter rate, operation voltage, and ignition pressure.

This information is for general planning purposes only. The Kurt J. Lesker Company makes no guarantees of the correctness of these numbers in your process. Contact the Kurt J. Lesker Company for specific assistance in setting up your process.

NON-MAGNETIC MATERIALS* Material Name Rate Ag Silver 2.88 Al Aluminum 1.00 Au Gold 1.74 Be Beryllium 0.21 C Carbon 0.23 Cu Copper 1.42 GaAs Gallium Arsenide {100} 1.03 GaAs Gallium Arsenide {110} 1.03 Ge Germanium 1.50 Mo Molybdenum 0.66 Nb Niobium 0.76 Pd Palladium 1.77 Pt Platinum 1.00 Re Rhenium 0.84 Rh Rhodium 1.16 Ru Ruthenium 0.98 Si Silicon 0.60 Sm Samarium 1.74 Ta Tantalum 0.67 Th Thorium 1.31 Ti Titanium 0.53 V Vanadium 0.50 W Tungsten 0.57 Y Yttrium 1.53 Zr Zirconium 0.88

* All rates in this table are relative to aluminum.

OXIDES AND CERAMICS Material Name Rate Al2O3 Alumina 0.05 SiC Silicon Carbide 0.22 SiO2 Silicon Dioxide 0.21 Tac Tantalum Carbide 0.09 Ta2O5 Tantalum Pentoxide 0.39 MAGNETIC MATERIALS Material Name Mag Moment Rate Co Cobalt Low 0.73 Cr Chromium Med 0.87 Fe Iron High 0.57 Mn Manganese Med 0.14 Ni Nickel Low 0.86 Ni80Fe20 Permalloy High 0.80

There are a few ways that you can increase/ maximize the sputtering rate of materials;

1. Increase power: While each material will be limited in their max power relative to their material properties, the cooling efficiency will allow you to operate the target at the highest possible power density. The first thing you should do is directly cool the target material by utilizing either a bolt-on style or bonded target configuration. This in addition to the aid of a conductive paste or epoxy will maximize the thermal conductivity and allow you to increase the power density to the maximum level attainable by the target material.

For more information, please visit sio2 sputtering.

2. Decrease source-substrate distance: The closer the target to the substrate, the higher the sputtering rate will be. Generally, the plasma will be contained within 2" above the target surface. Many sputtering applications utilize a 3"-4" source-substrate distance. Assuming a 4" source-substrate distance, the sputtering rate will fall off by approximately 25% for every inch beyond 4". However, the rate will typically increase by approximately 35% for every inch closer you go from 4" away.

3. Lower operating pressures: In sputtering, the more gas in the chamber, the more atom and ion collisions there will be. These collisions will reduce the rate at which material atoms eject from the target surface and deposit onto the substrate. By reducing the operating gas flow, these collisions will be reduced and will have a positive impact on the ultimate sputtering rates that can be achieved.

4. Increase the number of magnetrons in the chamber: Rates will scale linearly by the number of magnetrons that are added to your application. In production applications with specific yield requirements, once the power and source-substrate parameters have been fully maximized, increasing the number of magnetrons is a parameter that can be utilized to enhance sputtering rates.

Magnetron Sputtering of Silicon Dioxide

Silicon dioxide (SiO2) is an important material for manufacturing of semiconductors and microelectromechanical systems (MEMS). It is mainly used for passivation or insulation films and as dielectric layer.

One application example is the deposition of SiO2 as temperature compensation layer for TC-SAW filter devices in mobile communication. The performance of those filters strongly depends on the quality of the deposited SiO2 layer. Therefore, a cost-effective solution for high volume production with reliable process results and high wafer throughput is needed.

 

Advantages of magnetron sputtering for silicon dioxide deposition

• Dense films with high homogeneity and good purity
• Excellent coating precision
• Deposition with high rates
• Low substrate temperature allows processing of materials that are very fragile and sensitive to high temperatures and rapid temperature changes
• Variation of film properties by adjustable energetic substrate bombardment

 

 

For more sputtering target materialsinformation, please contact us. We will provide professional answers.