Sputtering Rates
To utilize the following charts effectively, start by identifying the material for which you have existing data. Multiply the known sputtering rate by the relative factors to estimate the sputtering rate for the new material. For instance, if previous data indicates a sputtering rate of 3.5A/s for aluminum at 100W, titanium under similar conditions will achieve approximately (0.53/1.00) * 3.5 A/s, leading to an estimated rate of 2 A/s.
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The sputtering rates in the accompanying table are determined based on a cathode potential of 500V. As the power increases to more than twice the original rate, there can be a slight decrease (up to 10%) in the relative rate. For example, aluminum at 250W will yield:
Al250W = 0.9 * AI100W * (P1/P0)
0.9 * 3.5 A/s * (250/100) = 7.4 A/s
The rates listed for ceramics are based on utilizing an RF power supply while accounting for the partial duty cycle compared to a DC supply. A pulsed DC supply can result in marginally higher effective rates.
The table regarding magnetic materials illustrates the rate for DC operation with a new target. As the magnetic target degrades, the remaining material's influence on the magnetic confinement field changes, which can lead to fluctuations in the sputtering rate, operational voltage, and ignition pressure.
Please note that this information serves merely as a guideline. The Kurt J. Lesker Company does not guarantee the accuracy of these figures in your specific processes. For tailored assistance in optimizing your process, please contact the Kurt J. Lesker Company.
NON-MAGNETIC MATERIALS*
| Material Name | Rate |
|---|
| Ag | Silver | 2.88 |
| Al | Aluminum | 1.00 |
| Au | Gold | 1.74 |
| Be | Beryllium | 0.21 |
| C | Carbon | 0.23 |
| Cu | Copper | 1.42 |
| GaAs | Gallium Arsenide {100} | 1.03 |
| GaAs | Gallium Arsenide {110} | 1.03 |
| Ge | Germanium | 1.50 |
| Mo | Molybdenum | 0.66 |
| Nb | Niobium | 0.76 |
| Pd | Palladium | 1.77 |
| Pt | Platinum | 1.00 |
| Re | Rhenium | 0.84 |
| Rh | Rhodium | 1.16 |
| Ru | Ruthenium | 0.98 |
| Si | Silicon | 0.60 |
| Sm | Samarium | 1.74 |
| Ta | Tantalum | 0.67 |
| Th | Thorium | 1.31 |
| Ti | Titanium | 0.53 |
| V | Vanadium | 0.50 |
| W | Tungsten | 0.57 |
| Y | Yttrium | 1.53 |
| Zr | Zirconium | 0.88 |
* All rates in this table are relative to aluminum.
OXIDES AND CERAMICS
| Material Name | Rate |
|---|
| Al2O3 | Alumina | 0.05 |
| SiC | Silicon Carbide | 0.22 |
| SiO2 | Silicon Dioxide | 0.21 |
| Tac | Tantalum Carbide | 0.09 |
| Ta2O5 | Tantalum Pentoxide | 0.39 |
MAGNETIC MATERIALS
| Material Name | Mag Moment | Rate |
|---|
| Co | Cobalt | Low | 0.73 |
| Cr | Chromium | Med | 0.87 |
| Fe | Iron | High | 0.57 |
| Mn | Manganese | Med | 0.14 |
| Ni | Nickel | Low | 0.86 |
| Ni80Fe20 | Permalloy | High | 0.80 |
To enhance the sputtering rate of materials, consider the following approaches:
1. Increase Power: Though specific materials have maximum power limitations based on their properties, optimizing cooling efficiency enables operation at maximum power density. Utilize either a bolt-on approach or a bonded target configuration for direct cooling. Using a conductive paste or epoxy in conjunction will maximize thermal conductivity, thereby allowing you to operate at the highest power density attainable by the material.
For further insights, visit sio2 sputtering.
2. Decrease Source-Substrate Distance: Bringing the target closer to the substrate will yield higher sputtering rates. The plasma typically remains contained within 2" above the target's surface. Commonly, sputtering setups operate at distances of 3"-4". Sputtering rates decrease by roughly 25% for every inch beyond 4", but they tend to increase by about 35% for each inch closer.
3. Lower Operating Pressures: In sputtering processes, higher gas volume in the chamber leads to more collisions between gas atoms and ions, which can hinder material atom ejection from the target surface. Lowering gas flow reduces these collisions, positively affecting overall sputtering rates.
4. Increase the Number of Magnetrons in the Chamber: More magnetrons can enhance sputtering rates, scaling linearly with the number of devices added. In production where yield requirements are high, after achieving max power and source-substrate parameters, adding magnetrons becomes a viable option for further enhancing sputtering rates.
Magnetron Sputtering of Silicon Dioxide
Silicon dioxide (SiO2) is crucial in the fabrication of semiconductors and microelectromechanical systems (MEMS). It serves primarily for passivation, insulation films, and acting as a dielectric layer.
An application instance involves depositing SiO2 as a temperature compensation layer for TC-SAW filter devices used in mobile communications. The performance of these filters is heavily reliant on the quality of the SiO2 layer, necessitating a cost-effective, high-volume production process that yields reliable results and high wafer throughput.
Advantages of Magnetron Sputtering for Silicon Dioxide Deposition
- Dense films with high uniformity and purity
- Excellent coating precision
- High deposition rates
- Low substrate temperature allows for processing of fragile materials sensitive to high temperatures
- Adjustable film properties through energetic substrate bombardment
For more sputtering target materials information, please contact us. We will provide professional answers.
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